| PART |
Description |
Maker |
| NESG2021M05-A NESG2021M05-T1 NESG2021M05-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
Renesas Electronics Corporation
|
| NESG204619 NESG204619-T1-A NESG204619-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
| MAX2642 MAX2642EXT-T MAX2642-MAX2643 MAX2643 MAX26 |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier
From old datasheet system
900MHz SiGe, High IP3, Low-Noise Amplifiers
900MHz SiGe / High IP3 / Low-Noise Amplifiers
Hex inverters 14-SOIC 0 to 70
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
| MSG33002 |
SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER
|
PANASONIC[Panasonic Semiconductor]
|
| AGB3307 AGB3307S24Q1 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
Gain Block Amplifiers
50-ohm High Linearity Low Noise Wideband Gain Block
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| NESG2021M16-T3 NESG2021M16-T3-A NESG2021M16 NESG20 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| NESG210719-T1-A NESG210719-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
California Eastern Labs
|
| HMC479ST89E HMC479ST8910 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz
|
Hittite Microwave Corporation
|
| HMC482ST89E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 5.0 GHz
|
Hittite Microwave Corporation
|
| HMC481MP86 HMC481MP8610 481MP86E HMC481MP86E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz
|
Hittite Microwave Corporation
|
| HMC479ST89 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC478MP86 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz
|
Hittite Microwave Corporation
|
