| PART |
Description |
Maker |
| SFP840 |
125W Power MOSFET, 500V Vdss, 8A Id, 0.85Om Rds
N-Channel MOSFET
|
SEMIWELL[SemiWell Semiconductor]
|
| IRC830 |
Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=4.5A)
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
| IRF840 IRF840PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A)
|
IRF[International Rectifier]
|
| IRFB18N50K |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A)
|
IRF[International Rectifier]
|
| IRFPS43N50KPBF |
HEXFET? Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.078Ω , ID = 47A )
HEXFET㈢ Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.078ヘ , ID = 47A )
|
International Rectifier
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRFP32N50K IRFP32N50 IRFP32N50KPBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
From old datasheet system
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）典\u003d 0.135ohm，身份证\u003d 32A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFP17N50LS |
Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）典\u003d 0.28ohm，身份证\u003d 16A条）
500V Single N-Channel HEXFET Power MOSFET in a SMD-247 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SK3935 |
Power MOSFET (N-ch 250V<VDSS≤500V)
|
TOSHIBA
|
