PART |
Description |
Maker |
CVE7800-06-023-011 CVE7800-24-023-011 |
mm WAVE BAND, 25 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
|
SKYWORKS SOLUTIONS INC
|
MA48708C MA48705E MA48706C MA48702E MA48700 MA4870 |
mm WAVE BAND, GALLIUM ARSENIDE, STEP RECOVERY DIODE GaAs Multiplier Varactors
|
M/A-COM Technology Solutions, Inc.
|
AH445-70 AH491-70 AH490-00 AH491-71 AH618-00 AH370 |
10 GHz - 11 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 12 GHz - 13.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 16.5 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 46 GHz - 50 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 20 GHz - 22 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 18 GHz - 20 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
ATMEL CORP
|
DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
TX-GC51111-85 TXB-GC51101-81 GC51102-89 |
C-KA BAND, 3.3 pF, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE C-KA BAND, 0.35 pF, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE C-KA BAND, 0.47 pF, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp. IXYS[IXYS Corporation]
|
AH214-F54 AH222-CHIP2 AH236-CHIP2 AH225-00 AH239-7 |
VHF-KA BAND, 1.4 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE VHF-KA BAND, 0.5 pF, 15 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE VHF-KA BAND, 2.8 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE VHF-KA BAND, 2.2 pF, 15 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE VHF-KA BAND, 6.9 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE VHF-KA BAND, 9.42 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE VHF-KA BAND, 5.72 pF, 15 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE VHF-KA BAND, 2.2 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
|
ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
GN01010 |
Gallium Arsenide Devices
|
Panasonic
|
GN01061B |
Gallium Arsenide Devices
|
Panasonic
|
|