| PART |
Description |
Maker |
| NJW21193G NJW21194G NJW21193 |
200W Medium Frequency Audio Output Transistors
Silicon Power Transistors
|
ON Semiconductor
|
| 2SB1657 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS
|
NEC
|
| NTE61 NTE60 |
Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications
|
NTE[NTE Electronics]
|
| 2N6551 2N6556 2N6552 2N6553 2N6554 2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier
|
CENTRAL[Central Semiconductor Corp]
|
| NTE285 NTE284 |
Quad Channel, 4/0, 1Mbps, Digital Isolator 16-SOIC -40 to 125
Silicon Complementary Transistors Audio Amplifier Output
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| NTE196 NTE197 |
Silicon Complementary Transistors Audio Power Output and Medium Power Switching
|
NTE[NTE Electronics]
|
| BC414 BC413 BC416 BC415 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
SILICON PLANAR EPITAXIAL TRANSISTORS
|
Micro Electronics
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| 2SB1388 2SD2093 |
NPN Triple Diffused Planar Silicon Transistors Driver Applications
PNP Epitaxial Planar Silicon Transistors
|
Sanyo
|
| PN4037 PN3053 2N-PN3053 2N-PN4037 2N3053 |
SILICON PLANAR EPITAXIAL TRANSISTORS
COMPLEMENTARY SILICON TRANSISTORS
|
MICRO-ELECTRONICS[Micro Electronics]
|
| MPSH10 MPSH11 ON2346 MPSH10-D |
VHF/UHF Transistors NPN Silicon
CASE 294, STYLE 2 TO2 (TO26AA)
From old datasheet system
VHF/UHF Transistors(NPN Silicon)
(MPSH10 / MPSH11) VHF/UHF Transistors
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
