| PART |
Description |
Maker |
| SERIESPVG613 PVG613S-T |
Microelectronic Power IC
|
International Rectifier
|
| 65336 |
Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay
|
International Rectifier
|
| PVT422 |
Microelectronic Power IC Relay Dual Pole/ Normally Open 0-400V/ 120mA AC/DC
Microelectronic Power IC Relay Dual Pole, Normally Open 0-400V, 120mA AC/DC
|
International Rectifier
|
| PVT322A |
Microelectronic Power IC Relay Dual Pole/ Normally Open 0-250V/ 170mA AC/DC
|
International Rectifier
|
| PVN012 |
Power MOSFET Photovoltaic Relay Microelectronic Power IC Relay Single Pole/ Normally Open/ 0-20V/ 2.5A AC/ 4.5A DC
|
International Rectifier
|
| PVN012 |
Power MOSFET Photovoltaic Relay Microelectronic Power IC Relay Single Pole, Normally Open, 0-20V, 2.5A AC/ 4.5A DC
|
International Rectifier
|
| PVG612 |
Power MOSFET Photovoltaic Relay Microelectronic Power IC Relay Single Pole/ Normally Open/ 0-60V/ 1.0A AC/ 2.0 A DC
|
International Rectifier
|
| GMS81508 GMS81516 |
HYUNDAI MicroElectronic, single chip microcomputer designed CMOS technology. ROM 8K bytes. RAM 448 bytes.
HYUNDAI MicroElectronic, single chip microcomputer designed CMOS technology. ROM 16K bytes. RAM 448 bytes.
|
Hynix Semiconductor
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
