| PART |
Description |
Maker |
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| PE71S2022 |
2.92mm SPDT PIN Diode Switch Operating From 2 GHz to 40 GHz Up To plus 27 dBm
|
Pasternack Enterprises,...
|
| TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TC1953A |
13.75 - 14.5 GHz 21 dBm MMIC
|
Transcom, Inc.
|
| TA050-062-45-27 |
5 - 6.2 GHz 27.5 dBm Amplifier
|
Transcom, Inc.
|
| TA020-060-36-34 |
2 - 6 GHz 33 dBm Amplifier
|
Transcom, Inc.
|
| TA005-025-23-24 |
0.5 - 2.5 GHz 24 dBm Amplifier
|
Transcom, Inc.
|
| TA008-055-20-24 |
0.8 - 5.5 GHz 25 dBm Amplifier
|
Transcom, Inc.
|
| TA075-180-24-12 |
7.5 - 18 GHz 12 dBm Amplifier
|
Transcom, Inc.
|
| TM020-080-12-24 |
2 ~ 8 GHz 24 dBm Module
|
Transcom, Inc.
|
| TA010-180-30-15 |
1 - 18 GHz 16 dBm Amplifier
|
Transcom, Inc.
|
| TM120-155-07-29 |
12 - 15.5 GHz 29 dBm Power Module
|
Transcom, Inc.
|
