| PART |
Description |
Maker |
| P121 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| P124 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| UTCHE8550 HE8550-TO-92 |
PNP EPITAXIAL SILIC ON TRANSISTOR
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| PRF134 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1240 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2013 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| PRF137 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F5001 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1516 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2012 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1430 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
