PART |
Description |
Maker |
Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器,红外Lumineszenzdiode GaAlA红外发射 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
VSMF2890GX01 |
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMF2893GX01 |
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMB14940 |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
VSMB2948SL |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器,红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm From old datasheet system
|
红外LED SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
TSHG620009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSFF541009 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHF6210 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHG6210 TSHG621009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
VSMB1940X01 |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSFF5210-09 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|