| PART |
Description |
Maker |
| HYMD132725B8-H HYMD132725B8-K HYMD132725B8-L HYMD1 |
DDR SDRAM - Unbuffered DIMM 256MB
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX72 |的CMOS |内存| 184PIN |塑料
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| M381L6523DUM-LCC M368L2923DUN-CB3 M368L2923DUN-CCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| HYMD116725BL8-H HYMD116725BL8-K HYMD116725BL8-L HY |
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
16Mx72|2.5V|M/K/H/L|x9|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
http://
|
| HDD16M72D9 HDD16M72D9W HDD16M72D9W-13A HDD16M72D9W |
DDR SDRAM Module 128Mbyte (16Mx72bit), based on 16Mx8, 4Banks 4K Ref., 184Pin-DIMM with Unbuffered ECC
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
| HYS72D32300GBR-6-C HYS72D64320GBR-6-C HYS72D128320 |
DDR SDRAM Modules - 512 MB (64Mx72) PC3200 2-bank; Available 3Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC3200 1-bank; Available 3Q04
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based; Available 3Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC2700 2-bank; Available 2Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC2700 1-bank; Available 2Q04
DDR SDRAM Modules - 256 MB (32Mx72) PC2700 1-bank; Available 2Q04
DDR SDRAM Modules - 1 GB (128Mx72) PC2700 2-bank; Available 2Q04
184-Pin Registered Double Data Rate SDRAM Module
|
INFINEON[Infineon Technologies AG]
|
| EBD12RB8ALFB-75 EBD12RB8ALFB-7A EBD12RB8ALFB-1A EB |
128MB Registered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 16MX72 |的CMOS |内存| 184PIN |塑料
|
Elpida Memory
Murata Manufacturing Co., Ltd.
|
| HYMD232646A8-H HYMD232646A8-K HYMD232646A8-L HYMD2 |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|
| HDD32M72D9RPW-13A HDD32M72D9RPW-13B |
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 32Mx8, 4Banks 8K Ref., 184Pin-DIMM with PLL & Register
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 32Mx8, 4Banks 8K Ref., 184Pin-DIMM with PLL & Register 256MB的DDR SDRAM内存模块2Mx72bit），基于2Mx8Banks 8K的参考。，184Pin - DIMM内存的锁相环
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| M312L3223CT0 M312L3223CT0-LB3 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
M312L3223CT0 DDR SDRAM 184pin DIMM Data Sheet
|
Samsung Electronic
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS64D64020GBDL-8-B HYS64D64020GBDL HYS64D64020GBD |
DDR SDRAM Modules - 512Mb (64Mx64) PC2100 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank, FBGA based
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
