PART |
Description |
Maker |
MX23L12854 |
128M-BIT Low Voltage / Serial Mask ROM Memory with 50MHz SPI Bus Interface
|
Macronix International
|
K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
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AD5330 AD5330BRU AD5331 AD5331BRU AD5333 AD5335 AD |
2.5V to 5.5V, 115A Single Rail-to-Rail Voltage Output 12-Bit DAC with Byte-Load Parallel Interface in 20-lead TSSOP 2.5V to 5.5V, 115A Single Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 20-lead TSSOP 2.5V to 5.5V, 115A Single Rail-to-Rail Voltage Output 8-Bit DAC with Parallel Interface in 20-lead TSSOP From old datasheet system D/A CONVERTER,SINGLE,8-BIT,CMOS,SSOP,20PIN 2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
|
Analog Devices Inc AD[Analog Devices]
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28C17A-25/P 28C17A-25/L 28C17A-25I/L 28C17A-25I/P |
5V, Low-Power, Parallel-Input, Voltage-Output, 12-Bit DAC 128Kx8 EEPROM 12-Bit DACs with 32-Channel Sample-and-Hold Outputs Evaluation Kit/Evaluation System for the MAX5417_, MAX5418_, MAX5419_ Calibrated, Quad, 12-Bit Voltage-Output DACs with Serial Interface 5V, Low-Power, Voltage-Output, Serial 12-Bit DACs 10-Bit Voltage-Output DACs in 8-Pin µMAX Single-Supply 3V/5V, Voltage-Output, Dual, Precision 10-Bit DACs x8的EEPROM
|
Microchip Technology, Inc.
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M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
AD5310 AD5310BRM AD5310BRT AD5310BRM-REEL AD5310BR |
2.5 V to 5.5 V/ 230uA/ Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs 2.7 V to 5.5 V, 140 A, Rail-to-Rail Voltage Output 10-Bit DAC 2.7 V to 5.5 V, 140 uA, Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 2.7 V to 5.5 V/ 140 uA/ Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 Lithium Battery; Voltage Rating:3.6V; Battery Terminals:Connector SERIAL INPUT LOADING, 6 us SETTLING TIME, 10-BIT DAC, PDSO8 2.7 V to 5.5 V. 140 uA. Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 2.7伏至5.540微安。轨至轨电压输出10位DAC采用SOT - 23 2.7 V to 5.5 V, 140 µA, Rail-to-Rail Voltage Output 10-Bit DAC 2.5 V to 5.5 V/ 115 uA/ Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
|
ANALOG DEVICES INC AD[Analog Devices] Analog Devices, Inc.
|
K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MC-4R256CPE6C-653 MC-4R256CPE6C-745 MC-4R256CPE6C- |
Direct Rambus?/a> DRAM RIMM?/a> Module 256M-BYTE (128M-WORD x 16-BIT) Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 256M-BYTE (128M-WORD x 16-BIT)
|
http:// Elpida Memory
|
K847PH K827P8 K827PH K817P K817P1 K817P2 K817P3 K8 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory From old datasheet system Optocoupler with Phototransistor Output XTAL MTL T/H HC49/U
|
Samsung Electronic TFUNK Vishay Telefunken Vishay Intertechnology,Inc.
|
M37210M4-227SP M37210M4-218SP M37210M3-560SP M3721 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER for VOLTAGE SYNTHESIZER with ON-SCREEN DISPLAY CONTROLLER SINGLE CHIP 8-BIT CMOS MICROCOMPUTER FOR VOLTAGE SYNTHESIZER Single Chip 8-Bit CMOS MICROCOMPUTER for Voltage SYNTHESISER WITH OSD Controller Single-chip 8-bit CMOS microcfomputer for voltage synthesizer with on-screen display controller.
|
Mitsubishi Electric Corporation
|
MBM29QM12DH MBM29QM12DH-60 MBM29QM12DH60 MBM29QM12 |
128M (8M X 16) BIT 128M的(8米16)位
|
Fujitsu Component Limited. Omron Electronics LLC Industrial Automation
|