| PART |
Description |
Maker |
| MX29LA129ML |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY
|
Macronix International
|
| MX29LA128MBTC-90R MX29LA128MTTC-10 MX29LA128MBTC-1 |
128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| K9K4G08U1M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
SAMSUNG
|
| HM5212325F HM5212325F-B60 HM5212325FBP-B60 |
128M LVTTL interface SDRAM 100MHz, 1-Mword x 32-bit x 4-bank
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM
INFRARED LIGHT EMITTING DIODE
LED ORANGE J-TYPE SMD TAPE/REEL 128M的LVTTL接口SDRAM00兆赫1 - Mword × 32位4个银行PC/100 SDRAM
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5V26CF HY5V26CLF |
8Mx16|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 8M × 16位| 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
Vishay Intertechnology, Inc.
|
| K9K2G0816QU0M |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet
|
Samsung Electronic
|
| MX23L12822 23L12822 |
128M-BIT MASK ROM (16/32 BIT OUTPUT)
From old datasheet system
|
Macronix 旺宏
|
| MC-4R256CEE6C-845 MC-4R256CEE6B MC-4R256CEE6B-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184
|
http://
NEC[NEC]
NEC Corp.
|
| K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G0 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MBM29QM12DH60PCN MBM29QM12DH MBM29QM12DH60 MBM29QM |
128M (8M X 16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
