PART |
Description |
Maker |
IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA From old datasheet system 3.1A 400V 1.800 Ohm N-Channel Power MOSFETs 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs 0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
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INTERSIL[Intersil Corporation] HARRIS SEMICONDUCTOR
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PVT412L PVT412S PVT412LS PVT412S-T PVT412 PVT412LS |
400V 1 Form A Photo Voltaic Relay in a 6-pin DIP Package 400V 1 Form A Photo Voltaic Relay in a 6-pin SMT Package Microelectronic Power IC Relay Single Pole, Normally Open, 0-400V, 140mA AC/DC MicroelectronicPowerICRelaySinglePole,NormallyOpen,0-400V,140mAAC/DC Stratum 3/3E Timing Card IC Stratum 3 Timing Card IC with Synchronous Ethernet Support
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IRF
IRF[International Rectifier]
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IRFP360 IRFP360PBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A) 功率MOSFET(减振钢板基本\u003d00V,的Rdson)\u003d 0.20ohm,身份证\u003d 23A条)
|
International Rectifier, Corp.
|
604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五(DRM)的| 10A条口(T)的有效值|18VAR
|
Rochester Electronics, LLC
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IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??) From old datasheet system 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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HARRIS SEMICONDUCTOR Intersil Corporation
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IRFP340 IRFP340PBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-247AC package HEXFET? Power MOSFET Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=11A) 功率MOSFET(减振钢板基本\u003d00V,的Rdson)\u003d 0.55ohm,身份证\u003d 11A条) 11 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
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IRF[International Rectifier] International Rectifier, Corp.
|
TIP49 TIP50 TIP47 TIP48 |
POWER TRANSISTORS(1.0A250-400V40W) POWER TRANSISTORS(1.0A/250-400V/40W) POWER TRANSISTORS(1.0A,250-400V,40W) 功率晶体管(安培,250 -00V,功0W
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MOSPEC[Mospec Semiconductor] Mospec Semiconductor, Corp.
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BU326 BU326A |
POWER TRANSISTORS(6A,375-400V,75W) 功率晶体管(6A375 -00V5W的) POWER TRANSISTORS(6A/375-400V/75W)
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Mospec Semiconductor, Corp. MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
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FMG-33S/R |
Ultra-Fast-Recovery Rectifier Diodes(- 400V) 超快速恢复整流二极管- 400V
|
Sanken Electric Co., Ltd.
|
RU4Z |
Fast-Recovery Rectifier Diodes(- 400V) 快速恢复整流二极管- 400V
|
Electronics Industry Public Company Limited
|
2SA1776 2SA1727 2SA1812 A5800343 2SA18121 |
High-voltage Switching Transistor (Telephone power supply) High-voltage Switching Transistor (Telephone power supply) (-400V/ -0.5A) High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) High-voltage Switching Transistor (Telephone power supply) (-400V -0.5A) From old datasheet system Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) High-voltage Switching Transistor ( 400V, 0.5A)
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ROHM[Rohm]
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MJE13006 MJE13007 |
POWER TRANSISTORS(8A /300-400V /80W) POWER TRANSISTORS(8A,300-400V,80W) POWER TRANSISTORS(8A300-400V80W)
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MOSPEC[Mospec Semiconductor]
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