| PART |
Description |
Maker |
| MTB29N15ET4 |
Power MOSFET 29 Amps, 150 Volts
|
ON Semiconductor
|
| NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK
Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK
Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK
LASER MOD 670NM .95MW MVP ROUND
LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package
Receptacle With A Standard Tail
Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
|
| NTTD1P02R2-D NTTD1P02R2/D |
Power MOSFET -1.45 Amps-20 Volts
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package
|
ON Semiconductor
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| MCP6L71RT-E_MS MCP6L71RT-E_OT MCP6L71RT-E_SL MCP6L |
2 MHz, 150 μA Op Amps
2 MHz, 150 渭A Op Amps
2 MHz, 150 楼矛A Op Amps
|
Microchip Technology
|
| RF1K49224 FN4330 |
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFETPower MOSFET
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET
From old datasheet system
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET Power MOSFET
3.5A/2.5A/ 30V/ 0.060/0.150 Ohms/ Complementary LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| AM29F800BT-90WBC AM29F800BT-55WBI AM29F800BB-55WBE |
and flexible way to implement power solutions for the latest high performance CPUs and ASICs.; Same as IR3087 with bag packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3709Z with Lead Free Packaging
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7470 with Lead Free Packaging
Complete VR11.0 or AMD PVID power solution.; A IR3505M packaged on tape and reel 3000 per reel
8 PWM 400 KHz Sync Contr in a 8-Pin SOIC(NB) package; A IRU3037ACS with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRLZ44NS with Lead Free Packaging
The XPHASE Control IC combined with an IR XPhase TM Phase IC provides a full featured and flexible way to implement a complete an Opteron or Athlon 64 power solution.; A IR3082M with Tape and Reel Packaging
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package; Similar to IRLL024Z with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package; A IRLL2705 with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a TO-262 Package; Similar to IRF2807ZL with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3805S with Lead Free Packaging
x8/x16 Flash EEPROM x8/x16闪存EEPROM
XPHASE VRD10 Control IC with VccVid and Overtemp Detect; Similar to IR3080M with Lead Free Packaging on Tape and Reel x8/x16闪存EEPROM
XPHASE IC with Fault and Overtemp Detect; Same as the IR3088AM with Tape and Reel Packaging. x8/x16闪存EEPROM
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO44
|
Linear Technology, Corp.
ATM Electronic, Corp.
Integrated Device Technology, Inc.
Advanced Micro Devices, Inc.
|
| VRF150 VRF15010 VRF150MP |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 15; Gain (dB): 10; VDD (V): 50; Coss (pF): 240; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| NTD32N06-1 NTD32N06-1G NTD32N06T4G NTD32N06 NTD32N |
Power MOSFET 32 Amps, 60 Volts
32 Amps, 60 Volts, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
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