| PART |
Description |
Maker |
| 2SC5712 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| MT3S06S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6L03AT |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5748 |
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4502 |
TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5859 |
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
|
Toshiba Semiconductor
|
| 2SC752 |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
|
Toshiba Semiconductor
|
| 2SC1815 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
|
Toshiba Semiconductor
|
| TPCP8901 |
TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
