| PART |
Description |
Maker |
| GM72V66841CLT GM72V66841CT GM72V66841CT_CLT GM72V6 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
2097152 word x 8 bit x 4 bank synchronous dynamic RAM
|
etc
LG Semicon Co.,Ltd.
LG Semiconductor
|
| MSC2323258D-XXDS4 MSC2323258D-XXBS4 MSC2323258D MS |
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
From old datasheet system
2097152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
2M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72
DPDT 10A MINI 115VAC 2097152字32位动态随机存储器模块：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
Oki Electric Industry Co., Ltd.
|
| MSC23B236D-XXDS8 MSC23B236D-XXBS8 MSC23B236D B236D |
2,097,152-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
2097152-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
From old datasheet system
RECTIFIER FAST-RECOVERY SINGLE 3A 300V 125A-ifsm 1.3V-vf 40ns 5uA-ir DO-201AD 500/BULK
RECTIFIER FAST-RECOVERY SINGLE 3A 300V 125A-ifsm 1.3V-vf 40ns 5uA-ir DO-201AD 1.2K/REEL-13
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| M5M5V208RV-12L M5M5V208RV-12LL M5M5V208VP-85L M5M5 |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| MC-454AC726 |
4M-Word By 72-BIT Dynamic RAM Module(4M×72位动态RAM模块) 分词72位动态内存模块（4米72位动态内存模块）
4M-Word By 72-BIT Dynamic RAM Module(4M?72浣????AM妯″?)
|
NEC Corp.
NEC, Corp.
|
| MK31VT464-10YE |
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??4浣??姝ュ???AM妯″?)
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M字64位同步动态RAM模块)
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M字4位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| TC511664BZ TC511664B |
65536 word x 16 bit DRAM
65,536 WORD x 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| M5M467805BJ M5M467805BTP-5 M5M465165BJ M5M465165BT |
From old datasheet system
EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MC-454AD646 MC-454CB645LFA-A10B MC-454CB645 MC-454 |
4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
4M-word by 64-Bit SDRAM Module
|
NEC Electronics
NEC Corp.
|
