PART |
Description |
Maker |
M5M44265CJ M5M44265CJ-5 M5M44265CJ-5S M5M44265CJ-6 |
EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M44260CJ-7 |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模194304位(262144字由16位)动态随机存储器
|
Mitsubishi Electric, Corp.
|
HN27C4000G-15 HN27C4000G-10 HN27C4000G-12 HN27C400 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM From old datasheet system
|
HITACHI[Hitachi Semiconductor]
|
TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No 4,194,304 WORD x BIT DYNAMIC RAM 4194304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MK31VT432-10YC |
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??2浣??姝ュ???AM妯″?) 4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字32位同步动态RAM模块) 4194304字32位同步动态随机存储器模块BANK)(4分字× 32位同步动态内存模块) 4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字2位同步动态RAM模块) From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module 262114-word x 8 bit dynamic random access memory module 26214-word x 8-bit dynamic random access memory module 262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
M66287FP |
262144-word x 8-bit x 3-FIELD MEMORY
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MSM532001B |
262144 word x 8-Bit Mask ROM
|
OKI Semiconductor
|
MB81461 |
262144 Bit Dual Port Dynamic RAM
|
Fujitsu Microelectronics
|
M5M5256DFP-70LLIBM |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|