Part Number Hot Search : 
FFXXCB1 NCP1013 Z90110 MMSZ52 3KP14C LCE20A A0408835 1N752A
Product Description
Full Text Search

MRF6S19140HSR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S19140HSR3_1283628.PDF Datasheet

 
Part No. MRF6S19140HSR3 MRF6S19140HR3 MRF6S19140HR3_07
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 400.35K  /  11 Page  

Maker

FREESCALE[Freescale Semiconductor, Inc]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF6S19140HS
Maker: MOTOROLA
Pack: 高频管
Stock: 147
Unit price for :
    50: $76.43
  100: $72.61
1000: $68.79

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ MRF6S19140HSR3 MRF6S19140HR3 MRF6S19140HR3_07 Datasheet PDF Downlaod from Datasheet.HK ]
[MRF6S19140HSR3 MRF6S19140HR3 MRF6S19140HR3_07 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF6S19140HSR3 ]

[ Price & Availability of MRF6S19140HSR3 by FindChips.com ]

 Full text search : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
 Product Description search : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs


 Related Part Number
PART Description Maker
MTM8N35 MTM8N40 MTH8N40 MTH8N35 (MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
MTM12P10 MTP12P06 MTP12P10 POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
IRFF120 IRFF121 IRFF122 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
General Electric Solid State
GE Solid State
SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
MAPLST1617-030CF RF Power Field Effect Transistor
Tyco Electronics
MRF8S19140HR3 MRF8S19140HSR3 RF Power Field Effect Transistors
Freescale Semiconductor
MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045 RF Power Field Effect Transistors
FREESCALE[Freescale Semiconductor, Inc]
MRF21125 MRF21125R3 MRF21125SR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF8S7120NR3 RF Power Field Effect Transistor
Motorola
VN30ABA VN35ABA Field Effect Power Transistor
General Electric Solid State
MRF19085 MRF19085LR3 MRF19085LSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF5S9101MBR1 MRF5S9101NBR1 MRF5S9101NR1 RF Power Field Effect Transistors
Freescale (Motorola)
 
 Related keyword From Full Text Search System
MRF6S19140HSR3 transformer MRF6S19140HSR3 型号替换 MRF6S19140HSR3 ascel MRF6S19140HSR3 watt MRF6S19140HSR3 Serie
MRF6S19140HSR3 converter MRF6S19140HSR3 connector MRF6S19140HSR3 替换的 MRF6S19140HSR3 barrier MRF6S19140HSR3 stock
 

 

Price & Availability of MRF6S19140HSR3

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.9705970287323