| PART |
Description |
Maker |
| HPMX-3002 HPMX-3002T10 |
150 MHz - 960 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Silicon Bipolar RFIC 900 MHz Driver Amplifier
|
http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| SPN7104 |
5 MHz - 150 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SPECTRUM CONTROL INC
|
| TF1103 |
10 MHz - 150 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TEMEX COMPONENTS
|
| M57785L |
135 MHz - 150 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
|
| MRF275G MRF275 |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
| TPV8100BD |
TPV8100B 470-860 MHz, 150 W, 28 V RF Power Transistor - Archived
|
Motorola
|
| M31002ANPN M31012ANPN M31022ANPN M31006ANPN M31026 |
VCXO, CLOCK, 150 MHz - 1400 MHz, LVDS OUTPUT
VCXO, CLOCK, 150 MHz - 1400 MHz, CMOS OUTPUT
VCXO, CLOCK, 150 MHz - 1400 MHz, PECL OUTPUT
9x14 mm, 3.3/2.5/1.8 Volt, LVPECL/LVDS/CML, VCXO
5x7 mm, 3.3/2.5/1.8 Volt, LVPECL/LVDS/CML, VCXO
|
MTRONPTI
|
| PTFB211503EL PTFB211503FL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFA081501E PTFA081501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz
|
Infineon Technologies AG
|
| UPC8101 UPC8101GR UPC8101GR-E2 |
150 MHz SILICON QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATIONS
3 V, SILICON MMIC 150 MHz QUADRATURE MODULATOR
|
NEC Corp.
NEC[NEC]
|
| MCP6L71RT-E_MS MCP6L71RT-E_OT MCP6L71RT-E_SL MCP6L |
2 MHz, 150 μA Op Amps
2 MHz, 150 渭A Op Amps
2 MHz, 150 楼矛A Op Amps
|
Microchip Technology
|
