| PART |
Description |
Maker |
| MP4T324335 MP4T3243 MP4T324300 MP4T324333 |
Bipolar High fT Low Voltage NPN Silicon Transistors
|
MPLUSE[M-pulse Microwave Inc.]
|
| EN3582A EN3582 |
Bipolar Transistor, -180V, -160A, Low VCE(sat) PNP Single NMP
High-Voltage Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| KIA378R05 KIA378R05PI KIA378R06PI KIA378R08PI KIA3 |
BIPOLAR LINEAR INTEGRATED CIRCUIT (4 TERMINAL 3A OUTPUT LOW DROP VOLTAGE REGULATOR)
3A 4-Terminal Low Drop(ON/OFF Controllable)
RES SM 100 OHM 1/16W 1% 0402
BIPOLAR LINEAR INTEGRATED CIRCUIT (4 TERMINAL 3A OUTPUT LOW DROP VOLTAGE REGULATOR) 双极线性集成电路（4码头3A输出低压差稳压器
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH10N170 |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH6N170 |
High Voltage, High Gain BIMOSFETMonolithic Bipolar MOS Transistor 12 A, 1700 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| TC2015-2.85VCTTR TC2185-2.85VCTTR TC2014-3.0VCTTR |
The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators ...
The TC2054, TC2055, and TC2186 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators. ...
|
Microchip
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
