| PART |
Description |
Maker |
| 2SK3913-01MR |
N-CHANNEL SILICO POWER MOSFET
|
Fuji Electric
|
| OM6414SP3 OM6415SP3 OM6413SP3 OM6416SP3 |
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 200V V(BR)DSS | 4A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 200伏五（巴西）直| 4A条（丁）
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 400V V(BR)DSS | 2.5A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 400V五（巴西）直| 2.5AI（四
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 100V V(BR)DSS | 6A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 100V的五（巴西）直| 6A条（丁）
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 500V五（巴西）直|甲（丁）
|
Samwha Electronics
International Rectifier, Corp.
|
| MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| GBU610 GBU608 |
6.0Amps Glass Passivated Single Phase Silico n Bridge
|
First Components Intern...
|
| BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五（巴西）国际消费电子展| 150A一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
| ET1275 1SI50A100 |
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 15A I(C)
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|独立| 1KV交五（巴西）总裁| 50A条一（c
|
IXYS, Corp.
|
| MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| EVK75-050 2DI75S050A |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C)
5-Pin, Multiple-Input, Programmable Reset ICs
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75 晶体管|晶体管电源模块|半桥|达林顿| 600V的五（巴西）总裁| 75
|
Analog Devices, Inc.
|
| CZ300R10KN CC150R10KN CC50R10KN |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 880V V(BR)CEO | 300A I(C) 晶体管|晶体管电源模块|达林顿| 880V五（巴西）总裁| 300我（丙）
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 150A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五（巴西）总裁| 150A一（c
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五（巴西）总裁| 50A条一（c
|
ON Semiconductor
RECOM Electronic GmbH
|
| 2DI150Z-100 |
Power transistor module for high power switching, AC and DC motor control applications
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 2DI150M-120 |
Power Transistor Module
|
Fuji Electric
|
