| PART |
Description |
Maker |
| WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| CGB7017-SC0609 |
DC-8.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier 直流8.0千兆赫的InGaP HBT，单片或包装符合增益模块放大
|
Mimix Broadband, Inc.
|
| DGSK40-025A |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
|
IXYS, Corp.
|
| PB-CGB7006-SC-0000 PB-CGB7006-SP-0000 |
DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 直流6.0千兆赫的InGaP HBT，MMIC的或包装，匹配增益模块放大器
|
Mimix Broadband, Inc.
|
| MGRB2018CT_D ON1883 MGRB2018CT MGRB2018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| CHP2299 |
CHP2299 is an InGaP HBT amplifier module offering high performance for WCDMA wireless handsets.
WCDMA InGaP HBT Amplifier Module
|
Anadigics Inc
|
| HMC361 |
GaAs HBT MMIC DIVIDE-BY-2, DC - 11.0 GHz
From old datasheet system
Prescaler
600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs HBT MMIC DIVIDE-BY-2/ DC - 11.0 GHz
|
Hittite Microwave Corpo...
HITTITE[Hittite Microwave Corporation]
美国讯泰微波有限公司上海代表
|
| CGB240 |
2-Stage Bluetooth InGaP HBT Power Amplifier
2.4 to 2.5 GHz HBT Bluetooth Power Amplifier
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| MWS11-PH43-CS MWS11-PH41-CS |
CDMA 2000 InGaP HBT Power Amplifier
WCDMA InGaP HBT Power Amplifier
|
Microsemi
|
| GN04005 |
Gallium Arsenide Devices
|
Panasonic
|
