| PART |
Description |
Maker |
| FMMT38A FMMT38B FMMT38C FMMT38CTA |
SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
300 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Fairchild Semiconductor
|
| 2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR
300 V, NPN, Si, POWER TRANSISTOR
20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66
20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61
10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
| KSC1507 KSC1507YTSTU KSC1507OTU KSC1507R KSC1507YT |
NPN Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Bulk 0.2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Color TV Chroma Output
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MJE13002 |
1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN SILICON POWER TRANSISTOR
|
UNISONIC TECHNOLOGIES CO LTD
UTC[Unisonic Technologies]
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 2SC3503 2SC3503CSTU 2SC3503DSTU 2SC3503ESTU 2SC350 |
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| MJE13003 MJE13003G |
SWITCHMODE TM Series NPN Silicon Power Transistor 300 AND 400 VOLTS 40 WATTS
|
ONSEMI[ON Semiconductor]
|
| CN301 CN304 CN300 CN302 CN303 |
0.300W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, A Ic, 50 - 300 hFE
0.300W General Purpose NPN Plastic Leaded Transistor. 35V Vceo, A Ic, 20 - hFE
0.300W General Purpose NPN Plastic Leaded Transistor. 35V Vceo, A Ic, 50 - 300 hFE
0.300W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, A Ic, 50 - 300 hFE
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
|
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| APT30M70SVRG APT30M70BVRG |
Power MOSFET; Package: D3 [S]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
|
| MJE13003 MJE13002 ON2007 13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS 1.5安培NPN硅功率晶体管300000
GT 6C 3#4 3#16 PIN RECP
SEMICONDUCTOR TECHNICAL DATA
From old datasheet system
|
MOTOROLA INC
Mospec Semiconductor, Corp.
Motorola, Inc.
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| KRC886T KRC881T KRC882T KRC883T KRC884T KRC885T KR |
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
(KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR
300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
|
