PART |
Description |
Maker |
TDA7497 |
10W 10W 10W/15W TRIPLE AMPLIFIER 10 10W STEREO AMPLIFIER WITH MUTE/ST-BY
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
MGFS48V2527 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC36V7177A C367177A |
From old datasheet system 7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
RFHA3832 |
10W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
MGFC40V3742_04 MGFC40V3742 MGFC40V374204 |
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
SA5204AD SA5204AN NE5204 NE5204A NE5204AD NE5204AN |
RES 110 OHM 1/10W .5% 0805 SMD 0 MHz - 350 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER Wide-band high-frequency amplifier
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
MGFC40V6472A C406472A |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET From old datasheet system
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|