| PART |
Description |
Maker |
| MGFC40V5258 |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET 5.2 - 5.8GHz频段0W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RF5117C1 RF5117C |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER 1800 MHz - 2800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices, Inc.
|
| RTC6705 |
CMOS 5.8GHz Band FM Transmitter
|
RichWave
|
| CH115-XX |
OUTLINE, 4-8GHz DIRECTIONAL COUPLER, TYPE-N, OCTAVE BAND
|
Advanced Technical Materials Inc.
|
| RF5117C RF5117CPCBA |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
| MGFC40V3742_04 MGFC40V3742 MGFC40V374204 |
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V6472A |
6.4-7.2 GHz BAND 10W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V6472_04 MGFC40V6472 MGFC40V647204 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785A C407785A |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TDA7297D |
10W 10W DUAL BRIDGE AMPLIFIER
|
ST Microelectronics
STMicroelectronics
|
