PART |
Description |
Maker |
HMC593LP309 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
|
Hittite Microwave Corporation
|
HMC604LP310 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz
|
Hittite Microwave Corporation Hittite Microwave Corpo...
|
MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
MGA-412P8-TR1G MGA-412P8-BLKG MGA-412P8-TR2G |
GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
|
Avago Technologies Ltd.
|
ST2305 |
P Channel Enchancement Mode MOSFET
|
STANSON[Stanson Technology]
|
ST3403 |
P Channel Enchancement Mode MOSFET
|
STANSON[Stanson Technology]
|
0603CS-30NXJLW GJM1555C1HR80BB01D GRM188R71H104KA9 |
Enhancement Mode pHEMT Technology (E-pHEMT)
|
Freescale Semiconductor, Inc
|
AS166-300 |
PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz PHEMT的砷化镓集成电路大功率SP4T开0.1-2.5千兆 PHEMT GaAs IC High Power SP4T Switch 0.1.5 GHz
|
Alpha Industries, Inc. ALPHA[Alpha Industries] Alpha Industries Inc
|
HMC5805LS6 |
GaAs pHEMT MMIC
|
Hittite Microwave
|
HMC102212 |
GaAs pHEMT MMIC
|
Hittite Microwave Corporation
|
TGF2040 |
400 um Discrete GaAs pHEMT
|
TriQuint Semiconductor
|
AL108-338 |
GaAs PHEMT Switchable Gain LNA
|
ALPHA[Alpha Industries]
|