| PART |
Description |
Maker |
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IDT7MPV6253 IDT7MPV6253S15M IDT7MPV6253S66M IDT7MP |
256KB AND 512KB SECONDARY CACHE MODULES FOR THE PowerPCO
|
IDT
Integrated Device Technology
|
| MCM72CF64SG66 MCM72CF32 MCM72CF32SG66 |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
|
| MCM72BB64SG66 MCM72BB64SG60 MCM72BB32 MCM72BB32SG6 |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| M29F400BT M29F400BB |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory
|
ST Microelectronics
|
| MPC2004 MPC2005 |
(MPC2004 / MPC2005) 256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola
|
| MPC2004 MPC2005 |
256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB12KB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| M29F400B M29F400T 5127 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Single Supply Flash Memory
From old datasheet system
|
STMicro
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| M29F400T-55M1R M29F400T-55M3R M29F400T-55N1R M29F4 |
Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-SOIC -40 to 85
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x8256Kb的x16插槽，启动座单电源闪
Excalibur High-Speed Low-Power Precision Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Precision Low-Power Single Supply Operational Amplifier 8-SOIC -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-SSOP -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Precision Low-Power Single Supply Operational Amplifier 8-PDIP -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
High-Speed, Low-Power, Precision Dual Operational Amplifier 20-LCCC -55 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Quad Precision Low-Power Single Supply Operational Amplifier 14-PDIP 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
High-Speed, Low-Power, Precision Dual Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Single Inverter Gate 5-SOT-23 -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Single 2-Input Exclusive-OR Gate 5-SOT-23 -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Single 2-Input Exclusive-OR Gate 5-SC70 -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-SSOP 0 to 70 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Single Positive-Edge-Triggered D-Type Flip-Flop 5-SOT-23 -40 to 85
Automotive Catalog Excalibur High-Speed Low-Power Precision Operational Amplifiers 8-SOIC -40 to 125
Precision Low-Power Single Supply Operational Amplifier 8-SOIC 0 to 70
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory
Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-TSSOP -40 to 85
Quad Precision Low-Power Single Supply Operational Amplifier 16-SOIC
High-Speed, Low-Power, Precision Dual Operational Amplifier 8-SOIC -55 to 125
Excalibur High-Speed Low-Power Precision Dual Operational Amplifier 8-PDIP
CONNECTOR ACCESSORY
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
|
