| PART |
Description |
Maker |
| CY7C1379B-117AC CY7C1379B-117BZC CY7C1379B |
9-Mbit (256K x 32) Flow-through SRAM with NoBL(TM) Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL⑩ Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL垄芒 Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| MCM63Z737TQ11 MCM63Z737TQ11R MCM63Z819TQ11 MCM63Z8 |
128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| CY7C1379C CY7C1355C-100AXC CY7C1355C-100AXI CY7C13 |
9-Mbit (256K x 32) Flow-through SRAM with NoBL垄芒 Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL?/a> Architecture
|
Cypress Semiconductor
|
| CY7C1353F-66AI CY7C1353F CY7C1353F-100AC CY7C1353F |
4-Mb (256K x 18) Flow-through SRAM with NoBL(TM) Architecture
4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 11 ns, PQFP100
4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 6.5 ns, PQFP100
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| CY7C1325F-117AC CY7C1325F CY7C1325F-133AC CY7C1325 |
4-Mb (256K x 18) Flow-Through Sync SRAM
|
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C1361C |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
|
Cypress Semiconductor
|
| MT58L256L36F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
