| PART |
Description |
Maker |
| E0C6S46 |
Advanced Single-Chip CMOS、Super Low Voltage 4-Bit Microcomputer Consisting of the E0C6200 4-Bit CMOS Core CPU,Dot Matrix LCD Driver，Programmable SVD Circuit/Sound Generator(4位高级的、CMOS、单片微型计算机（含4位E0C62000中央处理器核点阵LCD驱动器，可编程SVD电路/声音发生器）)
|
爱普生（中国）有限公
|
| MC74LCX16240DTR2 MC74LCX16244DTG MC74LCX16244DTR2 |
Low?Voltage CMOS 16?Bit Buffer With 5 V?Tolerant Inputs and Outputs (3?State, Inverting)
Low?Voltage CMOS 16?Bit Buffer With 5 V?Tolerant Inputs and Outputs (3?State, Non?Inverting)
Low?Voltage CMOS 16?Bit Transceiver With 5 V?Tolerant Inputs and Outputs (3?State, Non?Inverting)
Low?Voltage CMOS 16?Bit Transparent Latch With 5 V?Tolerant Inputs and Outputs (3?State, Non?Inverting)
Low−Voltage CMOS 16−Bit D−Type Flip−Flop With 5 V−Tolerant Inputs and Outputs (3−State, Non−Inverting)
Low?Voltage CMOS 16?Bit D?Type Flip?Flop With 5 V?Tolerant Inputs and Outputs (3?State, Non?Inverting)
|
ONSEMI[ON Semiconductor]
|
| K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016U3C-RB |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Surface Mount Resistors Thick Film Chip Resistors
256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| MC74LCX125 MC74LCX125D MC74LCX125DT MC74LCX125SD M |
LOW-VOLTAGE CMOS QUAD BUFFER LVC/LCX/Z SERIES, QUAD 1-BIT DRIVER, TRUE OUTPUT, PDSO14
LOW-VOLTAGE CMOS QUAD BUFFER 低电压CMOS四路缓冲
|
Motorola Mobility Holdings, Inc.
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
http://
|
| MX27L1000 MX27L1000MC-12 MX27L1000MC-15 MX27L1000M |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PDSO32
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32
TRIM POT 500 OHM 3MM SQUARE SMD
TRIM POT 50K OHM 3MM SQUARE SMD
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
| AM29SL800DB100ED A800DB15PD A800DT15PD |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
|
Advanced Micro Devices, Inc.
|
| AM29SL800DB100 AM29SL800DT90 AM29SL800D AM29SL800D |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
|
AMD[Advanced Micro Devices]
|
| K6T2008U2A K6T2008U2A-B K6T2008U2A-F K6T2008U2A-FF |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
|
Samsung semiconductor
|
| FMP1617DAX |
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
