| PART |
Description |
Maker |
| M5M5V416BRT-70HI M5M5V416BTP-70HI M5M5V416BRT |
Memory>Low Power SRAM
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M5M54R16AJ-10 M5M54R16AJ-12 M5M54R16AJ-15 M5M54R16 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM 4194304位（262144字由16位）的CMOS静态RAM
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system
Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M54R01J-12 M5M54R01J-15 D98020 |
PTSE 19C 19#20 SKT RECP
From old datasheet system
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MH4V724AWXJ-6 MH4V724AWXJ-5 MH4V724AWXJ |
FAST PAGE MODE 301989888 - BIT ( 4194304 - WORD BY 72 - BIT ) DYNAMIC RAM 快速页面模01989888 -位（4194304 - Word2 -位）动态随机存储器
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MK31VT464-10YE |
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??4浣??姝ュ???AM妯″?)
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M字64位同步动态RAM模块)
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M字4位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSC23S4721E-8BS18 MSC23S4721E |
4,194,304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
4194304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
From old datasheet system
4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字2位同步动态RAM模块)
4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字72位同步动态RAM模块)
|
OKI electronic componet...
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| MH4S64DBKG-8 MH4S64DBKG-7 MH4S64DBKG-8L |
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
CAP USE W/ SERU AU OA BRN 268435456位（4194304 -文字4位）SynchronousDRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M5V416BTP M5M5V416BTP-70H M5M5V416BTP-85LW M5M5V |
ECONOLINE: ROM - Micro Size SIP4 Package- 3kVDC Isolation- Industry Standard Pinout- UL94V-0 Package Material- Custom Solutions Available- Cost Effective- Efficiency to 85% 4194304位（262144字由16位）的CMOS静RAM
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM 4194304位（262144字由16位）的CMOS静态RAM
Octal Buffers/Drivers With 3-State Outputs 20-SOIC -40 to 85
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM
262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
GoldStar
LG[LG Semicon Co.,Ltd.]
|
| TC514101AXX |
4194304 Word X 1 Bit Dynamic RAM
|
Toshiba
|
| GM71C4256 |
262144 word x 4 Bit CMOS DRAM
|
GoldStar
|
