| PART |
Description |
Maker |
| M366S1623DT0-C80 M366S1623DT0 M366S1623DT0-C1H M36 |
PC100 Unbuffered DIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| M366S3323CT0-C1L M366S3323CT0 M366S3323CT0-C1H |
PC100 Unbuffered DIMM
32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M366S2953MTS-C75 M366S2953MTS-C1L M366S2953MTS M36 |
128Mx64 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
PC133/PC100 Unbuffered DIMM
From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| GMM2649233ETG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| HYMD216726A6-H HYMD216726A6-K HYMD216726A6-L HYMD2 |
Unbuffered DDR SO-DIMM
16Mx72|2.5V|M/K/H/L|x5|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| UG42S6442HSG UG42S6442HSG-PL UG42S6442HSG-PH |
16M BYTES (2M X 64 BITS) PC100 SDRAM UNBUFFERED SODIMM
|
List of Unclassifed Manufacturers
ETC
|
| V43648S04V V43648S04VCTG-10PC |
3.3 VOLT 8M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| HYMD264646B8-H HYMD264646B8-K HYMD264646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
| V437216S04VCTG-10PC |
3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 UNBUFFERED ECC SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| HYMD132725B8-H HYMD132725B8-K HYMD132725B8-L HYMD1 |
DDR SDRAM - Unbuffered DIMM 256MB
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX72 |的CMOS |内存| 184PIN |塑料
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|
| EBE11UD8AHFA-8E-E EBE11UD8AHFA-8G-E |
128M X 64 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
1GB Unbuffered DDR2 SDRAM DIMM
|
Elpida Memory, Inc.
|
