PART |
Description |
Maker |
MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
0603CS-30NXJLW GJM1555C1HR80BB01D GRM188R71H104KA9 |
Enhancement Mode pHEMT Technology (E-pHEMT)
|
Freescale Semiconductor, Inc
|
MML20211HT1 |
Enhancement Mode pHEMT Technology (E--pHEMT)
|
Freescale Semiconductor, Inc
|
FPD4000V |
4W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
FPD3000 FPD3000-000 FPD3000-000S3 FPD3000-000SQ |
2W POWER pHEMT
|
RF Micro Devices
|
HMC7229LS6 |
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz
|
Hittite Microwave Corporation
|
HMC965LP5E |
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR
|
Hittite Microwave Corporation
|
LP1500P100 |
PACKAGED 1W POWER PHEMT KU BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
Filtronic Compound Semicond... FILTRONIC[Filtronic Compound Semiconductors]
|
FPD6836 FPD68361 |
0.25W POWER PHEMT
|
Filtronic Compound Semiconductors Filtronic Compound Semi...
|
FPD2000AS-EB FPD2000AS FPD2000AS1 |
2W PACKAGED POWER PHEMT
|
Filtronic Compound Semiconductors
|
FPD1000AS |
1W PACKAGED POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|