| PART |
Description |
Maker |
| KVR266X64SC25 KVR266X64SC25_512 KVR266X64SC25/512 |
512MB 266MHz DDR Non-ECC CL2.5 SODIMM
MEMORY MODULE SPECIFICATION 512MB 64M x 64-BIT DDR266 CL2.5 200-PIN SODIMM
|
ETC
List of Unclassifed Manufacturers
|
| KVR133X64C3/512 |
512Mb 64M x 64-Bit PC133 CL3 168-Pin DIMM Module
|
Kingston Technology
|
| HYS64V6422 HYS64V64220GBDL-75-D HYS64V64220GBDL-8- |
512MB PC133 (2-2-2) 2-bank. FBGA based. available 3Q02 12MB的PC133的（2-2-2银行FBGA封装为基础？可Q02
144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank, FBGA based; End-of-Life
|
INFINEON[Infineon Technologies AG]
|
| KVR400X64C3A/512 |
512MB 64M x 64-Bit DDR400
|
Kingston Technology
|
| HYM72V64736T8 HYM72V64736LT8-H |
64Mx72|3.3V|K/H|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Samsung Semiconductor Co., Ltd.
HYNIX SEMICONDUCTOR INC
|
| IS42S16320B-7BL IS42S16320B-7BLI IS42S16320B IS42S |
64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
|
http://
Integrated Silicon Solution, Inc
|
| EBE52UD6AFSA-6E-E EBE52UD6AFSA EBE52UD6AFSA-4A-E E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks)
|
ELPIDA[Elpida Memory]
|
| EBE51UD8AGFA-6E-E EBE51UD8AGFA EBE51UD8AGFA-4A-E E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| EBE51RD8ABFA-5C-E EBE51RD8ABFA-4A-E |
512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
Elpida Memory, Inc.
|
| EBE51ED8AGFA-6E-E EBE51ED8AGFA EBE51ED8AGFA-4A-E E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| EBE51RD8AGFA-6E-E EBE51RD8AGFA EBE51RD8AGFA-4A-E E |
512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
