| PART |
Description |
Maker |
| K7J641882M |
(K7J641882M / K7J643682M) 72Mb M-die DDRII SRAM Specification
|
Samsung semiconductor
|
| K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 |
256Kx36 & 512Kx18 SRAM
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GS8642ZV36B-300I GS8642ZV36GB-200I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 5.5 ns, PBGA119
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS864436B-166I GS864472C-166 GS864418B-150I GS8644 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 7 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS8644Z36E-166V GS8644Z18E-225V GS8644Z36E-225V |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 7 ns, PBGA165
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PBGA165
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| K7I163684B K7I161884B |
512Kx36 & 1Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3636CBG R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| K7K1636T2C K7K1618T2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| R1QLA7236ABB |
72-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| GS8662D08GE-200 GS8662D08GE-333I GS8662D08GE-250I |
72Mb SigmaQuad-II Burst of 4 SRAM
|
http://
GSI Technology
|
| IDT71P71104 IDT71P71204 |
(IDT71P71x04) 18Mb Pipelined DDRII SRAM Burst of 2
|
IDT
|
| GS8662R08E-333 GS8662R08E-333I GS8662R08E-300 GS86 |
72Mb SigmaCIO DDR-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
