| PART |
Description |
Maker |
| K6F8016R6B K6F8016R6B-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EM6160FR16AW-12LF EM6160FV16AW-12LF EM6161FR16AW-1 |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Sol...
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| EM680FU16 |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| K6F3216U6M K6F3216U6M-F |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EM646FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| EM640FU16E |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| K6F1016U4C-EF70 DS_K6F1016U4C K6F1016U4C-AF55 K6F1 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HY62SF16404E-SF HY62SF16404E-SFI HY62SF16404E-DF H |
256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM
|
Hynix Semiconductor
|
| K6F4008U2G-F K6F4008U2G |
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k × 8位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| K6F4008U2E K6F4008U2E-EF55 K6F4008U2E-EF70 K6F4008 |
From old datasheet system
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HY62KF0840 |
High speed, super low power and 4M bit full CMOS SRAM organized as 512K words by 8bits
|
HYNIX
|
