| PART |
Description |
Maker |
| K4R571669D |
256/288Mbit RDRAM(D-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYR183240G-845 HYR183240G-840 HYR183240G-745 HYR18 |
RDRAMModules - 256MB RIMM Module (128Mx16) PC800-45 Discontinued
RDRAMModules - 128MB RIMM Module (64Mx18) PC800-45 Discontinued
RDRAMModules - 512MB RIMM Module (256Mx18) PC600-53 Discontinued
RDRAMModules - 256MB RIMM Module (128Mx18) PC600-53 Discontinued
RDRAMModules - 128MB RIMM Module (64Mx16) PC600-53 Discontinued
RDRAMModules - 128MB RIMM Module (64Mx18) PC600-53 Discontinued
RDRAMModules - 256MB RIMM Module (128Mx16) PC600-53 Discontinued
RDRAM?Modules - 128MB RIMM Module (64Mx18) PC800-45 Discontinued
128 MB (64M x 18) PC800-40 ECC RIMM M...
RDRAM?Modules - 512MB RIMM Module (256Mx18) PC800-45 Discontinued
512 MB (256 Mx 18) PC800-40 ECC RIMM ...
RDRAM?Modules - 256MB RIMM Module (128Mx18) PC800-45 Discontinued
256 MB (128M x 18) PC800-40 ECC RIMM ...
RDRAM?Modules - 128MB RIMM Module (64Mx16) PC800-45 Discontinued
128 MB (64M x 16) PC800-40 RIMM Module
RDRAM?Modules - 64MB RIMM Module (32Mx16) PC800-45 Discontinued
RDRAM?Modules - 256MB RIMM Module (128Mx16) PC800-45 Discontinued
256 MB (128M x 16) PC800-40 RIMM Module
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) 直接的RDRAM RIMM的模块（88兆RDRAMs
|
INFINEON[Infineon Technologies AG]
|
| MB814953 |
4.5 MBit RDRAM
|
Fujitsu Microelectronics
|
| MSM5718B70 |
18-Megabit RDRAM (2M x 9) 18兆位的RDRAM米9
|
OKI SEMICONDUCTOR CO., LTD.
|
| K4R881869 K4R881869M K4R881869M-NCK8 K4R881869M-NB |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
Samsung Electronic
SAMSUNG [Samsung semiconductor]
SAMSUNG[Samsung semiconductor]
|
| 1212691 |
Replacement die - CF 500/DIE RCI 6-1
|
PHOENIX CONTACT
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| SIDC03D30SIC2SAWN SIDC03D30SIC2UNSAWN |
Diodes - HV Chips - 300V, 10A die sawn
Diodes - HV Chips - 300V, 10A die unsawn
|
Infineon
|
| MURC620 |
MURC620 Ultrafast Silicon Die
MURC620 Ultrafast Silicon Die
|
http://
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