| PART |
Description |
Maker |
| ISL9R460S3ST ISL9R460S2 ISL9R460P2 ISL9R460S3S |
4A, 600V Stealth Single Diode
4A, 600V Stealth Diode
4A 600V Stealth Diode
4A, 600V Stealth⑩ Diode
4A, 600V StealthDiode
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| ISL9860PF2 ISL9R860PF2 SAMSUNGSEMICONDUCTORCO.LTD. |
8A, 600V Stealth⑩ Diode
8A 600V Stealth Diode
8A, 600V Stealth Diode 8A条，600V的隐形二极管
|
FAIRCHILD[Fairchild Semiconductor]
SAMSUNG[Samsung semiconductor]
Fairchild Semiconductor Corporation
SAMSUNG SEMICONDUCTOR CO. LTD.
Fairchild Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| ISL9R460S2 ISL9R460P2 ISL9R460S3S ISL9R460S3STL99Z |
4 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB
4A,600V Stealth Diode
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IHW40T120 |
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IGBTs & DuoPacks - 40A / 1200V IGBT and 18A / 1200V Diode in DuoPack
|
Infineon Technologies AG
|
| ISL9R860P209 |
8A, 600V Stealth Diode
|
Fairchild Semiconductor
|
| ISL9R1560G2 ISL9R1560S2 ISL9R1560S3S |
15A, 600V Stealth Diode
|
Fairchild Semiconductor
|
| RURD4120S RURD4120 UR4120 RURD4120S9A |
4A, 1200V UltraFast Diode; ; No of Pins: 2; Container: Tape & Reel 4 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252
4A, 1200V Ultrafast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
| FFPF60SA60DSTU |
8A, 600V Stealth Dual Series Diode; Package: TO-220F; No of Pins: 3; Container: Rail
|
FAIRCHILD SEMICONDUCTOR CORP
|
