| PART |
Description |
Maker |
| IDT8T49N004I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| 8T49N012 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IRF9952PBF IRF9952TRPBF |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB06N60 SGB06N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7389 IRF7389TR |
Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| SGB02N12007 SGB02N120 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP20N60HS09 SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
http://
Infineon Technologies AG
|
