| PART |
Description |
Maker |
| HYB39SC128160FE-6 HYI39SC128160FE-6 |
128-MBit Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
|
| IS42S32160A IS42S32160A-75B IS42S32160A-75BI IS42S |
4M Words x 32 Bits x 4 Banks (512-MBIT) SYNCHRONOUS DYNAMIC RAM
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Integrated Silicon Solution, Inc
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
|
| HYB39S64160AT HYB39S64160AT-8B HYB39S64160AT-10 HY |
64 MBit Synchronous DRAM
|
Siemens Semiconductor Group
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
| HYB39SC256160FE-6 HYB39SC256160FE-7 HYB39SC256160F |
256-MBit Synchronous DRAM
|
Qimonda AG
|
| HYB39S256400 HYB39S256400T-10 HYB39S256400T-8 HYB3 |
256 MBit Synchronous DRAM
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HYB39SC256 HYB39SC256800FF-7 |
256-MBit Synchronous DRAM
|
Qimonda AG
|
| HYI39S512400AT-7.5 HYB39S512400AT-7.5 HYB39S512160 |
512-Mbit Synchronous DRAM
|
Qimonda AG
|
| HYB39S128160CT HYB39S128160CTL HYB39S128800CT |
128-MBit Synchronous DRAM
|
Infineon Technologies
|
| IS42S32200C1-6T IS42S32200C1-7BL IS42S32200C1-6BL |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| IS42S32400D-6BLI IS42S32400D-6B-TR IS42S32400D-6TL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
天津新技术产业园区管理委员会
|
