| PART |
Description |
Maker |
| K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
| DDR110-56T7RL DDR110-XXT7RL DDR110-27T7RL |
10-LINE 56 ohm OTHER TERMINATOR, PDSO24
DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH 双倍数据速率终端网络具有禁用开
DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| EM44BM1684LBB-3F |
512Mb (8M隆驴4Bank隆驴16) Double DATA RATE 2 SDRAM
512Mb (8M×4Bank×16) Double DATA RATE 2 SDRAM
|
Eorex Corporation
|
| EM42AM1684RTB EM42AM1684RTB-5F EM42AM1684RTB-6F |
256Mb (4M隆驴4Bank隆驴16) Double DATA RATE SDRAM
256Mb (4M×4Bank×16) Double DATA RATE SDRAM
|
Eorex Corporation
|
| ADD8616A8A VDD8608A8A-75BA VDD8608A8A ADD8616A8A-7 |
DOUBLE DATA RATE SDRAM
From old datasheet system
DOUBLE DATA RATE SDRAM 双倍数据速率SDRAM内存
|
A-DATA[A-Data Technology]
ADATA Technology Co., Ltd.
|
| W9725G6JB25I |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| M13S128324A-2M |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M14D2561616A-2E |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
| HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
| MT46V16M8 |
DOUBLE DATA RATE DDR SDRAM
|
Micron Technology
|
