| PART |
Description |
Maker |
| 26MB40A 36MB80A 35AMB12026MB 25AMB12026MB 35AMB120 |
SINGLE PHASE BRIDGE 单相桥式
4-Pole Solid State Relay w/o Protection SCR 单相桥式
IC REG LDO 1.0A 1.8V TO-252
IC DAA LITELINK III FW RING DET 3.3V TUBED
equipment to provide connection and isolation to/from the public telephone network
50V Bridge in a D-34A package
SINGLEPHASEBRIDGE
100V Bridge in a D-34A package
1200V Bridge in a D-34A package
400V Bridge in a D-34A package
600V Bridge in a D-34A package
800V Bridge in a D-34A package
1000V Bridge in a D-34A package
|
International Rectifier, Corp.
InternationalRectifier
IRF[International Rectifier]
|
| NTTFS4945NTAG |
Power MOSFET 30V 34A 9 mOhm Single N-Channel u8FL 7100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
| IRFAG50 IRFAG50-15 |
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
HEXFET?TRANSISTORS 1000V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Simple Drive Requirements
|
International Rectifier
|
| IXGA12N100AU1 IXGA12N100U1 IXGP12N100AU1 IXGP12N10 |
1000V IGBT
|
IXYS
|
| IXGH32N100A3 IXGT32N100A3 |
GenX3 1000V IGBT
|
IXYS Corporation
|
| IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT
|
IXYS Corporation
|
| IXGA4N100 IXGP4N100 |
1000V IGBT
ADVANCED TECHNICAL INFORMATION
|
IXYS Corporation
|
| FGA50N100BNTD |
1000V, 50A NPT-Trench IGBT CO-PAK
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRG7PG42UD-EPBF |
1000V UltraFast Co-Pack IGBT in a TO-247 package
|
International Rectifier
|
| IRHY7G30CMSE |
1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY
|
International Rectifier
|
