| PART |
Description |
Maker |
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
| SGU20N40L |
Wide Noise Immunity IGBT Suitable for Strobe Flash applications(应用于闸门闪光的抗噪声绝缘栅双极晶体IGBT)) 400 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
|
| GT20G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT15G101 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT25G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT25G101SM06 GT25G101SM |
SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT5G133 |
IGBT for strobe flash
|
TOSHIBA
|
| RJP4301APP09 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4006AGE |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CY25AAJ-8 CY25AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Nch IGBT for STROBE FLASHER
|
Mitsubishi Electric Corporation
POWEREX [Powerex Power Semiconductors]
POWEREX[Powerex Power Semiconductors]
|
