| PART |
Description |
Maker |
| G10519-14 |
InGaAs APD with preamp
|
Hamamatsu Corporation
|
| G8925-24 G8925 G8925-21 G8925-22 G8925-23 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| G10342-54 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
|
| FRM3Z231LT FRM3Z231KT |
InGaAs-PIN/Preamp Receiver
Pin Preamplifier Modules
|
EUDYNA[Eudyna Devices Inc]
FUJITSU
|
| PD-1351-X PD-1350-T PD-1351-S PD-1351-T PD-1350-F |
Mini-Size InGaAs PIN PD MODULE InGaAs PIN PHOTODIODE WITH SINGLE-MODE FIBER PIGTAIL 迷你尺寸铟镓砷PIN码帕金森模块铟镓砷PIN光电二极管与单模光纤尾纤
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| G8338-02 G7871 G7871-02 G8795-02 G8338 G8341 G8341 |
TRANS PREBIASED PNP 150MW SOT523
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 200V; Case Size: 25x25 mm; Packaging: Bulk
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| FRM3Z232LY |
InGaAs-PIN/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
| G6121ETCKIRD1035E06 |
Infrared detector module with preamp
|
Hamamatsu Corporation
|
| P171B046BAF P171 P171A016BAA P171A016BAF P171B014B |
P171-type PIN/Preamp. 155 MHz preamp, LR, 50 microm fiber, SC
PV SERIES P171型密前置放大
MCU CMOS 28 LD LOW PWR, -40C to 85C, 28-SOIC 300mil, T/R 密码/前置放大
|
NIC Components, Corp.
AGERE[Agere Systems]
|
| P-15B3K P-15B3NC P-15BZ50 |
An ultrafast, InGaAs PIN photodetector module
|
Advanced Photonix, Inc.
|
| PD500 PD500-1XX PD500-0XX |
500μm InGaAs Photodiode
500レm InGaAs Photodiode
500?? InGaAs Photodiode
|
ANADIGICS[ANADIGICS, Inc]
|
