| PART |
Description |
Maker |
| FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| G10519-14 |
InGaAs APD with preamp
|
Hamamatsu Corporation
|
| FRM5W232HY |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM5J141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM5N143DS |
InGaAs-APD/Preamp Receiver
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| FU-311SPP-CV3 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| G10342-54 G10342-14 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
| G12072-54-15 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
| NR8360JP-BC |
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
California Eastern Laboratories
|
| NR4510UR |
InGaAs APD ROSA with internal preamplifier for 2.5 Gb/s applications.
|
NEC
|
| G10518-51 G10518-54 |
InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
Hamamatsu Photonics K.K.
|
| NR4510US NR4510US-AZ NR4510UT NR4510UT-AZ |
InGaAs APD RECEIVER FOR 2.5 Gb/s ROSA WITH INTERNAL PRE-AMPLIFIER
|
California Eastern Labs
|
