| PART |
Description |
Maker |
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSYC163D FSYC163D1 FSYC163D3 FN4740 FSYC163R4 FSYC |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSR1110R FSR1110D FN4828 FSR1110R4 FSR1110D1 FSR11 |
From old datasheet system
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSYE913A0R4 FSYE23A0R4 FSYE430D |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil
|
| FSYE913A0R4 FSYE913A0D FSYE913A0D1 FSYE913A0D3 FSY |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSYE913A0R3 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil
|
| FSYE430D3 FSYE430R FSYE430R1 FSYE430R3 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil
|
| FSPS230R4 FSPS230D1 FSPS230F FSPS230F3 FSPS230F4 F |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSL23A0R FSL23A0D FN4476 FSL23A0R4 FSL23A0D1 FSL23 |
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSPL234F FSPL234R FN4881 FSPL234R4 |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐射N沟道MOS场效应管)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF
From old datasheet system
|
Intersil Corporation
|
| HCTS365MS HCTS365D HCTS365DMSR HCTS365HMSR HCTS365 |
Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered
Radiation Hardened Hex Buffer/Line Driver Non-Inverting 辐射硬化六角缓冲线路驱动器非反相
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HS-RTX2010 HS-RTX2010RH HS8-RTX2010RH HS9-RTX2010R |
Radiation Hardened Real Time Express??Microcontroller
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, CQFP84
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, UUC84
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70
Radiation Hardened Real Time Express Microcontroller
|
Advanced Analogic Technologies, Inc.
Intersil, Corp.
Intersil Corporation
|
