| PART |
Description |
Maker |
| FMS6G15US60 |
Compact & Complex Module
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FMS6G10US60S |
Compact & Complex Module
|
FAIRCHILD[Fairchild Semiconductor]
|
| FMC6G15US60 |
Compact & Complex Module
|
Fairchild Semiconductor Corporation
|
| FMS6G10US60 |
Compact & Complex Module
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FMS7G20US60S |
Compact & Complex Module
|
Fairchild Semiconductor
|
| FMS7G10US60 |
Compact & Complex Module
|
Fairchild Semiconductor
|
| FMM7G20US60N |
Compact & Complex Module
|
Fairchild Semiconductor
|
| LC4256 LC4384V75T176C LC4512 LC4128 LC4064 LC4032 |
IC,COMPLEX-EEPLD,256-CELL,3.8NS PROP DELAY,QFP,100PIN,PLASTIC
IC,COMPLEX-EEPLD,384-CELL,10NS PROP DELAY,QFP,176PIN,PLASTIC
IC,COMPLEX-EEPLD,512-CELL,4.5NS PROP DELAY,QFP,176PIN,PLASTIC
System Programmable Super Fast High Density PLDs
IC,COMPLEX-EEPLD,64-CELL,3.2NS PROP DELAY,QFP,100PIN,PLASTIC
IC,COMPLEX-EEPLD,32-CELL,3.2NS PROP DELAY,TQFP,48PIN,PLASTIC
|
Lattice Semiconductor Corp
|
| 7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C)
From old datasheet system
|
Fuji Semiconductors, Inc.
|
| MIG20J806HA |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 600V V(BR)CES | 25A I(C) 晶体管| IGBT功率模块|络合物桥| 600V的五（巴西）国际消费电子展|5A一（c
|
Toshiba, Corp.
|
| STAR405F20 |
compact violet laser diode module
|
Roithner LaserTechnik G...
|
|
