| PART |
Description |
Maker |
| 2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
P-channel enhancement type
|
NEC Corp.
NEC[NEC]
|
| FDB035AN06A0 FDB035AN06A0NL |
N-Channel PowerTrench MOSFET 60V/ 80A/ 3.5m
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mз
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| AUIRGDC0250 |
1200V Automotive Low VCEon Discrete IGBT in a Super TO-220 package
|
International Rectifier
|
| 2SJ208 2SJ208-T2 2SJ208-T1 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0502-8 00; No. of Positions: 6; Connector Type: Wire
P-CHANNEL MOS FET FOR SWITCHING
|
NEC Corp.
NEC[NEC]
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| HI-8421PST HI-8421 HI-8421PSI |
Six-Channel Discrete-to-Digital Interface - 28V/Open
six channel discrete-to-digital interface
|
HOLTIC[Holt Integrated Circuits]
|
| DMN33D8L |
Discrete - MOSFETs - MOSFET Master Table - N Channel - N Channel 30V
|
Diodes
|
| IXTK100N25P IXTQ100N25P IXTT100N25P |
Discrete MOSFETs: Standard N-channel Types
PolarHT Power MOSFET N-Channel Enhancement Mode
|
IXYS Corporation
|
| IXTH14N100 |
Discrete MOSFETs: Standard N-channel Types
MegaMOSTMFET 14 A, 1000 V, 0.82 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| GT30J341 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| TSM4NB60CH TSM4NB60CI TSM4NB60CP TSM4NB60CZ |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
