| PART |
Description |
Maker |
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| FD1500AU-120DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| 932C2W2P2J-F 932C4W2P2J-F 932C6W2P2J-F 932C7W2P2J- |
Polypropylene Film Capacitors High Voltage/High Frequency Switching Power Supplies
|
Cornell Dubilier Electronics, Inc.
|
| 2SJ114 |
HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER
|
Hitachi Semiconductor
|
| 2014VS-111ME 2014VS-151ME 2014VS-201ME |
High Frequency, High Current Power Inductors
|
Coilcraft lnc.
|
| FP0807R1-R07-R FP0807R1-R12-R FP0807R1-R22-R FP080 |
High Current, High Frequency, Power Inductors
|
Cooper Bussmann, Inc.
|
| FP1107R1-R07-R FP1107R2-R07-R FP1107R1-R12-R FP110 |
High Current, High Frequency, Power Inductors
|
Cooper Bussmann, Inc.
|
| 2014VS-66NMEB 1212VS-66NMED 2014VS-66NMED 1212VS-6 |
High Frequency, High Current Power Inductors
|
Coilcraft lnc.
|
| HF05-1A54-6 HF05-A54-5 HF05-A54-6 HF05-A54-7 HF05- |
High Frequency and High Power Reed Relays
|
Meder Electronic
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| IS9-2100ARH/PROTO 5962F9953602QXC IS9-2100ARH-Q IS |
High Frequency Half Bridge Driver, Rad-Hard, without UVLO
RES POWER .036 OHM 3W 5% SMT
Radiation Hardened High Frequency Half Bridge Driver 1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16
|
Intersil Corporation
Intersil, Corp.
|
|
