| PART |
Description |
Maker |
| EC31QS03L |
SBD TYPE
Extremely Low Forward Voltage drop Diode
|
ETC
Nihon Inter Electronics Corporation
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Q62705-K274 KPY33-RK |
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| GI821 GI828 GI820 GI826 GI822 GI824 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 820uF; Voltage: 63V; Case Size: 16x35.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 680uF; Voltage: 63V; Case Size: 16x31.5 mm; Packaging: Bulk
Fast Switching Plastic Rectifier(快速转换塑胶整流器)
|
GE Security, Inc.
GE[General Semiconductor]
|
| DP100 |
Extremely low collector-to-emitter saturation voltage
PNP Silicon Transistor
|
KODENSHI KOREA CORP.
AUK corp
|
| FMMT720 |
625mW power dissipation, Extremely low saturation voltage e.g. 10mV typ
|
TY Semiconductor Co., Ltd
|
| 1KSMBJ11A 1KSMBJ9.1A 1KSMBJ51A 1KSMBJ91A 1KSMBJ24A |
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:600V; Forward Current Avg Rectified, IF(AV):1A; Non Repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41
Silicon Avalanche Diodes - 1000W Surface Mount Transient Voltage Suppressor 硅雪崩二极管- 1000瓦表面贴装瞬态电压抑制器
|
Littelfuse, Inc.
|
| Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| GI250-2 GI250-4 GI250-1 GI250-3 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 820uF; Voltage: 50V; Case Size: 12.5x40 mm; Packaging: Bulk
HIGH VOLTAGE GLASS PASSIVATED JUNCTION RECTIFIER
|
GOOD-ARK Electronics
|
| PMG370XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
From old datasheet system
|
NXP Semiconductors
Philips Semiconductors
|
