| PART |
Description |
Maker |
| 2SC5053 |
Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA.
|
TY Semiconductor Co., L...
|
| DTD513ZE09 |
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| 2DA2018 |
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
|
Diodes
|
| CPH3106 |
Bipolar Transistor -12V, -3A, Low VCE(sat), PNP Single CPH3
|
ON Semiconductor
|
| 2SB118410 2SB1184TLR 2SB1243TV2Q |
Power Transistor (-60V, -3A)
Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.
|
Rohm
|
| 2SB1386 |
Low VCE(sat). VCE(sat) = -0.35V (Typ.) Excellent DC current gain
|
TY Semiconductor Co., Ltd
|
| 2SD1615A |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|
| NSS30201MR6T1G |
30V, 3A, Low VCE(sat) NPN Transistor(30V, 3A, 低VCE(sat) NPN晶体 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
30 V, 3 A, Low VCE(sat) NPN Transistor
|
ONSEMI[ON Semiconductor]
|
| NSS35200MR6T1G |
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 浣?CE(sat) PNP?朵?绠?
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT(1.8V超低VCE(sat)的绝缘栅双极晶体 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
|
