PART |
Description |
Maker |
2SK307407 2SK3074 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
ARF465A ARF465B |
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD N-CHANNEL ENHANCEMENT MODE POWER MOSFETs RF Power Transistors: INDUSTRIAL, SCIENTIFIC, MEDICAL (ISM) & HF COMMUNICATIONS
|
Advanced Power Technology
|
ARF448A03 ARF448A ARF448B |
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD N-CHANNEL ENHANCEMENT MODE
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
BF961 BF963 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS A G INFINEON TECHNOLOGIES AG
|
BF995B |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
VISHAY TELEFUNKEN
|
MS1261 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 15; P(in) (W): 1; Gain (dB): 12; Vcc (V): 12.5; Cob (pF): 45; fO (MHz): 0; Case Style: M122 UHF BAND, Si, NPN, RF POWER TRANSISTOR RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp. Advanced Power Technology
|
2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
MMBT9018G-X-AE3-R MMBT9018G-X-AN3-R MMBT9018L-X-AE |
AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE PACKAGE-3
|
Unisonic Technologies Co., Ltd. UNISONIC TECHNOLOGIES CO LTD
|
SD1275-01 |
VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
STMICROELECTRONICS
|
2SC2118 |
VHF BAND POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|